Study on indium leaching control of waste LCD panels
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摘要:
作为一种稀散金属，铟在地壳中储存量少，废液晶显示器中的铟极具资源价值，开展废液晶面板铟高效浸出与杂质离子同步转移控制研究对于优化铟再生工艺有重要参考价值。以废液晶面板为试验材料，以硫酸为浸提剂，研究了硫酸浓度、浸出时间、液固比、反应温度对铟及铁、铝、硅浸出率的影响。结果表明：硫酸浓度对铟及铁、铝、硅浸出率的影响较大，控制适当的硫酸浓度可有效抑制杂质元素浸出，适当延长浸出时间有利于铟浸出，且对铁、铝、硅浸出的影响不大；铟浸提最优条件，硫酸浓度为15%，浸出时间为5 h，液固比为10，反应温度为20 ℃，该条件下铟浸出率达到98%。
Abstract:As a kind of rare and scattered metal, the amount of indium in the crust is little. The indium of waste liquid crystal display (LCD) panels has great resource value. It is of significant reference value for the optimization of the indium regeneration process of waste LCD panels to research on high-efficiency leaching of indium from waste LCD panels and synchronous transfer control of impurity ions. Waste LCD panels were used as test material and sulfuric acid as extractant to study the influences of sulfuric acid concentration, leaching time, liquid-solid ratio and reaction temperature on the leaching rate of indium, iron, aluminium and silicon. The results showed that the concentration of sulfuric acid had a great influence on the leaching of indium, iron, aluminium and silicon, the leaching of impurity elements could be inhibited effectively by controlling appropriate sulfuric acid concentration. Properly prolonging the leaching time was beneficial to the leaching of indium, but had little effect on the leaching of iron, aluminium and silicon. The optimum conditions of indium extraction were as follows: sulfuric acid concentration was 15%, the acid leaching time was 5 h, the liquid-solid ratio was 10, the reaction temperature was 20 ℃, and the indium extraction rate reached 98%.
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Key words:
- liquid crystal display panel /
- indium /
- acid leaching /
- leaching rate
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图 1 硫酸浓度对主要元素浸出率的影响
Figure 1. Effect of sulfuric acid concentration on leaching rates of main elements
图 2 浸出时间对主要元素浸出率的影响
Figure 2. Effect of leaching time on leaching rates of main elements
图 3 液固比对主要元素浸出率的影响
Figure 3. Effect of liquid-solid ratio on leaching rates of main elements
图 4 反应温度对主要元素浸出率的影响
Figure 4. Effect of reaction temperature on leaching rates of main elements
表 1 废液晶面板浸出试验方案
Table 1. Leaching experimental scheme of waste LCD panel
样品质量/g 搅拌速率/（r/min） 硫酸浓度/% 浸出时间/h 液固比 反应温度/℃ 2 350 5、10、15、20、30 1、2、3、4、5、6 3、5、10、15、20 20、40、60、80 
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